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HEMT High-electron-mobility transistor

A High-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device. Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention due to their high-power performance. Like other FETs, HEMTs are used in integrated circuits as digital on-off switches. FETs can also be used as amplifiers for large amounts of current using a small voltage as a control signal. Both of these uses are made possible by the FET’s unique current-voltage characteristics. HEMT transistors are able to operate at higher frequencies than ordinary transistors, up to millimeter wave frequencies, and are used in high-frequency products such as cell phones, satellite television receivers, voltage converters, and radar equipment. They are widely used in satellite receivers, in low power amplifiers and in the defense industry.

MESFET stands for metal–semiconductor field-effect transistor

MESFET stands for metal–semiconductor field-effect transistor. It is quite similar to a JFET in construction and terminology. The difference is that instead of using a p-n junction for a gate, a Schottky (metal-semiconductor) junction is used. MESFETs are usually constructed in compound semiconductor technologies lacking high quality surface passivation such as GaAs, InP, or SiC, and are faster but more expensive than silicon-based JFETs or MOSFETs. Production MESFETs are operated up to approximately 45 GHz,[1] and are commonly used for microwave frequency communications and radar. The first MESFETs were developed in 1966, and a year later their extremely high frequency RF microwave performance was demonstrated.[2]

JFET (Junction Field-Effect Transistor) – N-CHANNEL or P-CHANNEL

The junction gate field-effect transistor (JFET or JUGFET) is one of the simple type of field-effect transistor.[1] JFETs are three-terminal semiconductor devices that can be used as electronically-controlled switches, amplifiers, or voltage-controlled resistors.Unlike bipolar transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between source and drain terminals. By applying a reverse bias voltage to a gate terminal, the channel is "pinched", so that the electric current is impeded or switched off completely. A JFET is usually ON when there is no potential difference between its gate and source terminals. If a potential difference of the proper polarity is applied between its gate and source terminals, the JFET will be more resistive to current flow, which means less current would flow in the channel between the source and drain terminals. Thus, JFETs are sometimes referred to as depletion-mode devices.

Field-effect transistor

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device. FETs are also known as unipolar transistors since they involve single-carrier-type operation. Many different implementations of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The conductivity between the drain and source terminals is controlled by an electric field in the device, which is generated by the voltage difference between the body and the gate of the device.